Fabrication Process of Nano and Optoelectronic Devices Based on Nitrided Gaas: XPS Analysis and Electrical Measurements

Abstract

Nano and optoelectronic devices elaborated with gallium arsenic (GaAs) usually known as have been a topic of several studies. Such structures are widely used in various applications. However, the major obstacle encountered in the elaboration of these structures is the oxidation of the GaAs surface which incur a poor quality of the interfaces between the III-V’s and the metallic contacts leading to the degradation of the electronic properties of the device. Thereby the passivation of the GaAs surface appears as a key point to improve the performance of GaAs based devices. Different surface passivation methods have been developed to remove this adverse effect as anodization process, Se treatment and N2 plasma treatment. We focused our attention in this presentation on the improvement of the electrical quality of Schottky barrier diodes (SBDs) based on nitridated n-GaAs(100) using a new fabrication process. We will focus on controlling the elaboration steps using XPS measurements and electrically testing the fabricated structures using I-V and C-V measurements at different conditions. This presentation allows us to analyze the effect of the nitridation process and the impact of the technological steps of fabrication on the electrical quality of realized SBDs.